| PART |
Description |
Maker |
| MT5C1008F-70 MT5C1008C-20 MT5C1008C-20L MT5C1008F- |
128K x 8 SRAM WITH DUAL CHIP ENABLE AVAILABLE AS MILITARY SPECIFICATIONS 128K的8的SRAM具有双芯片使可作为军用规
|
Austin Semiconductor, Inc
Advanced Semiconductor, Inc.
|
| CM7V03-T1A |
Low Profile SM 32.768Khz Watch Crystal with Military Temperature Range
|
Golledge Electronics Lt...
|
| HM628511CJPI12 HM628511HCJPI-12 HM628511HCI |
Memory>Fast SRAM>Asynchronous SRAM
Wide Temperature Range Version 4M High Speed SRAM (512-kword 】 8-bit)
Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit)
|
RENESAS[Renesas Electronics Corporation]
|
| HM62A16100I HM62A16100LBPI-7 HM62A16100LBPI-7SL |
Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit)
Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
Memory>Low Power SRAM
|
Renesas Electronics Corporation
|
| R1LV0416CBG-5SI R1LV0416CBG-7LI R1LV0416CBG-I |
Memory>Low Power SRAM
Wide Temperature Range Version 4M SRAM (256-kword 】 16-bit)
Wide Temperature Range Version 4M SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
| M123A01BP430C M123A01BP431C M123A01BP510C M123A01B |
Military Type Designation: Capacitors, Fixed, Ceramic Dielectric, (Temperature Stable and General Purpose), High Reliability
Military Type Designation: Capacitors, Fixed, Ceramic Dielectric, (Temperature Stable and General Purpose), High Reliability
|
AVX Corporation
|
| 6229A-30/BXAJC 6229A-35/BXAJC 6229A-45/BXAJC 6229A |
x4 SRAM
Dual Trip SOT Temperature Switches
Low-Cost, 2.7V to 5.5V, Micropower Temperature Switches in SOT23 and TO-220 x4的SRAM
|
NXP Semiconductors N.V.
|
| CY7C1367C-166BGC CY7C1366C-200BZI CY7C1366C-200BZC |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PBGA119
Low Cost, Single, 300 MHz Voltage Feedback Amplifier; Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 256K X 36 CACHE SRAM, 3 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| GS8321ZV36E-250I GS8321ZV36E-225I GS8321ZV36E-133 |
Octal 16-/12-Bit Rail-to-Rail DACs with 10ppm/C Max Reference; Package: 20-TSSOP; Temperature Range: 0°C to 70°C
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 32 ZBT SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
| HM62V8100LBPI-5SL HM62V8100LTTI-5SL HM62V8100I |
Wide Temperature Range Version 8 M SRAM (1024-kword 8-bit) 宽温版本八米的SRAM1024 - KWord的？8位）
Wide Temperature Range Version 8 M SRAM (1024-kword ′ 8-bit)
|
Renesas Electronics, Corp.
Renesas Electronics Corporation.
|
| OP77BRC/883C |
Next Generation OP07, Ultralow Offset Voltage Operational Amplifier; Package: LCC:CER LEADLESS CHIP CARR; No of Pins: 20; Temperature Range: Military OP-AMP, 120 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, CQCC20
|
Analog Devices, Inc.
|
